Projection of the liquidus surface in the al 2 o 3 –hfo 2 –la 2 o 3 Mos2 fet hfo2 schematic device substrate spheres cvd Phase zro
Lu2Hf2O7 Sintering
Lu2hf2o7 sintering Ferroelectric hafnium oxide – ferroelectric memory company Hfo zro
Tetragonal doping hfo2 stabilization mim trench capacitors enabler 50nm thermally
Hfo stabilizationFerroelectric hafnium oxide phase fefet nonvolatile crystalline amorphous nextbigfuture known fig Phase diagram hfo2 tohokudai tohoku(pdf) the al2o3–hfo2–y2o3 phase diagram. iv. vertical sections.
Akira yoshikawaHfo2 initio ferroelectricity causes simulation relaxation lattice Phase diagram zro 2 –al 2 o 3 (after lakiza (203)) and hfo 2 –al 2 o 39: thickness/temperature phase diagram for zro 2 and h f o 2 thin films.
Figure 1 from tetragonal phase stabilization by doping as an enabler of
Hfo publication projection liquidus surface onto(pdf) causes of ferroelectricity in hfo2-based thin films: an ab initio Hfo2 monoclinic orthorhombic amorphous cubic atomic vacancy oxygen phases crystalline dopedA schematic diagram of mos2 fet device on hfo2/si substrate. the blue.
(a) atomic models for hfo2 in monoclinic, cubic, orthorhombic, andFigure 1 from stabilization of high-pressure phase in hfo 2 .
Figure 1 from Tetragonal Phase Stabilization by Doping as an Enabler of
9: Thickness/Temperature phase diagram for ZrO 2 and H f O 2 thin films
(PDF) Causes of ferroelectricity in HfO2-based thin films: An ab initio
Akira YOSHIKAWA | Tohoku University, Sendai | Tohokudai | Institute for
Ferroelectric hafnium oxide – Ferroelectric Memory Company
Figure 1 from Stabilization of high-pressure phase in HfO 2
Projection of the liquidus surface in the Al 2 O 3 –HfO 2 –La 2 O 3
(PDF) The Al2O3–HfO2–Y2O3 phase diagram. IV. Vertical sections
a Schematic diagram of MoS2 FET device on HfO2/Si substrate. The blue
Lu2Hf2O7 Sintering